Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging

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dc.contributor.author Li, Bowen
dc.contributor.author Endo, Akira
dc.contributor.author O'Gorman, Colm
dc.contributor.author Otsuka, Takamitsu
dc.contributor.author Cummins, T. (Thomas)
dc.contributor.author Donnelly, Tony
dc.contributor.author Kilbane, Deirdre
dc.contributor.author Dunne, Padraig
dc.contributor.author O'Sullivan, Gerry
dc.contributor.author Jiang, Weihua
dc.contributor.author Higashiguchi, Takeshi
dc.contributor.author Yugami, Noboru
dc.date.accessioned 2012-04-17T11:06:31Z
dc.date.available 2012-04-17T11:06:31Z
dc.date.copyright 2011 SPIE en
dc.date.issued 2011-08-22
dc.identifier.uri http://hdl.handle.net/10197/3566
dc.description Presented at a poster session at Advances in X-Ray/EUV Optics and Components VI, Monday 22 August 2011, San Diego, California, USA en
dc.description.abstract An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved transition array) emission of highly ionized Sn is optimized for high conversion efficiency and full recovery of the injected fuel is realized through ion deflection in a magnetic field. By use of a low-density target, satellite emission is suppressed and full ionization attained with short pulse CO2 laser irradiation. The UTA is scalable to shorter wavelengths, and Gd is shown to have similar conversion efficiency to Sn (13.5 nm) at a higher plasma temperature, with a narrow spectrum centered at 6.7 nm, where a 70% reflectivity mirror is anticipated. Optimization of short pulse CO2 laser irradiation is studied, and further extension of the same method is discussed, to realize 100 W average power down to a wavelength of 3 nm en
dc.description.sponsorship Science Foundation Ireland en
dc.format.extent 1658868 bytes
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Society of Photo-optical Instrumentation Engineers en
dc.relation.ispartof Proceedings of the SPIE, Volume 8139 Advances in X-Ray/EUV Optics and Components VI, San Diego, California, 22nd August 2011 en
dc.rights One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. en
dc.subject Extreme ultraviolet en
dc.subject Water window en
dc.subject Unresolved transition array en
dc.subject Rare-earth en
dc.subject LLP en
dc.subject.lcsh Ultraviolet radiation en
dc.subject.lcsh Lithography en
dc.subject.lcsh Laser plasmas en
dc.subject.lcsh Rare earths en
dc.title Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging en
dc.type Conference Publication en
dc.internal.availability Full text available en
dc.internal.webversions Publisher's version en
dc.internal.webversions http://dx.doi.org/10.1117/12.892513 en
dc.status Not peer reviewed en
dc.identifier.doi 10.1117/12.892513
dc.neeo.contributor Li|Bowen|aut| en
dc.neeo.contributor Endo|Akira|aut| en
dc.neeo.contributor O'Gorman|Colm|aut| en
dc.neeo.contributor Otsuka|Takamitsu|aut| en
dc.neeo.contributor Cummins|T. (Thomas)|aut| en
dc.neeo.contributor Donnelly|Tony|aut| en
dc.neeo.contributor Kilbane|Deirdre|aut| en
dc.neeo.contributor Dunne|Padraig|aut| en
dc.neeo.contributor O'Sullivan|Gerry|aut| en
dc.neeo.contributor Jiang|Weihua|aut| en
dc.neeo.contributor Higashiguchi|Takeshi|aut| en
dc.neeo.contributor Yugami|Noboru|aut| en
dc.description.admin au, ke, co, li - TS 28.03.12 en


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