Gd plasma source modeling at 6.7 nm for future lithography

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dc.contributor.author Li, Bowen
dc.contributor.author Dunne, Padraig
dc.contributor.author Higashiguchi, Takeshi
dc.contributor.author Otsuka, Takamitsu
dc.contributor.author Yugami, Noboru
dc.contributor.author Jiang, Weihua
dc.contributor.author Endo, Akira
dc.contributor.author O'Sullivan, Gerry
dc.date.accessioned 2012-04-17T08:35:07Z
dc.date.available 2012-04-17T08:35:07Z
dc.date.copyright 2011 American Institute of Physics en
dc.date.issued 2011-12-05
dc.identifier.citation Applied Physics Letters en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10197/3564
dc.description.abstract Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions which showed that n=4 - n=4 resonance transitions overlap in the 6.5 – 7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement observed between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach. en
dc.description.sponsorship Science Foundation Ireland en
dc.format.extent 389203 bytes
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher American Institute of Physics en
dc.rights The following article appeared in Applied Physics Letters 99, 231502 (2011) DOI: http://dx.doi.org/10.1063/1.3666042 and may be found at http://apl.aip.org/resource/1/applab/v99/i23/p231502_s1. The article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. en
dc.subject Plasma en
dc.subject.lcsh Laser plasmas en
dc.subject.lcsh Gadolinium en
dc.subject.lcsh Lithography en
dc.title Gd plasma source modeling at 6.7 nm for future lithography en
dc.type Journal Article en
dc.internal.availability Full text available en
dc.internal.webversions Publisher's version
dc.internal.webversions http://dx.doi.org/10.1063/1.3666042
dc.status Peer reviewed en
dc.identifier.volume 99 en
dc.identifier.issue 23 en
dc.identifier.startpage 231502 en
dc.identifier.doi 10.1063/1.3666042
dc.neeo.contributor Li|Bowen|aut|
dc.neeo.contributor Dunne|Padraig|aut|
dc.neeo.contributor Higashiguchi|Takeshi|aut|
dc.neeo.contributor Otsuka|Takamitsu|aut|
dc.neeo.contributor Yugami|Noboru|aut|
dc.neeo.contributor Jiang|Weihua|aut|
dc.neeo.contributor Endo|Akira|aut|
dc.neeo.contributor O'Sullivan|Gerry|aut|
dc.description.admin ab, li - TS 27.03.12 en


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