| dc.contributor.author | White, John Kingston | |
| dc.contributor.author | Dunne, Padraig | |
| dc.contributor.author | Hayden, Patrick | |
| dc.contributor.author | O'Sullivan, Gerry | |
| dc.date.accessioned | 2011-01-14T17:18:42Z | |
| dc.date.available | 2011-01-14T17:18:42Z | |
| dc.date.copyright | 2009 American Institute of Physics | en |
| dc.date.issued | 2009-12-04 | |
| dc.identifier.citation | Journal of Applied Physics | en |
| dc.identifier.uri | http://hdl.handle.net/10197/2725 | |
| dc.description.abstract | Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to form an unresolved transition array. To aid computation, transition arrays are treated statistically, and Hartree-Fock results are used to calculate radiation transport in the optically thick regime with a 1-D Lagrangian plasma hydrodynamics code. Time-dependent spectra and conversion efficiencies of 2% in-band 13.5-nm emission to laser energy are predicted for a Nd:YAG laser incident on a pure tin slab target as a function of laser power density and pulse duration at normal incidence. Calculated results showed a maximum conversion efficiency of 2.3% for a 10-ns pulse duration at 8.0 x 1010 W/cm2 and are compared to experimental data where available. Evidence for the need to include lateral expansion is presented. | en |
| dc.description.sponsorship | Science Foundation Ireland | en |
| dc.format.extent | 386419 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.subject | HF calculations | en |
| dc.subject | Plasma light propagation | en |
| dc.subject | Plasma production by laser, | en |
| dc.subject | Plasma simulation | en |
| dc.subject.lcsh | Hartree-Fock approximation | en |
| dc.subject.lcsh | Laser plasmas | en |
| dc.subject.lcsh | Semiconductor industry--Laser use in | en |
| dc.subject.lcsh | Extreme ultraviolet lithography | en |
| dc.title | Simplified 1-D calculation of 13.5-nm emission in a tin plasma including radiation transport | en |
| dc.type | Journal Article | en |
| dc.internal.availability | Full text available | en |
| dc.internal.webversions | Publisher's version | en |
| dc.internal.webversions | http://dx.doi.org/10.1063/1.3264692 | en |
| dc.status | Peer reviewed | en |
| dc.identifier.volume | 106 | en |
| dc.identifier.issue | 11 | en |
| dc.identifier.startpage | 113303-1 | en |
| dc.identifier.endpage | 113303-8 | en |
| dc.identifier.doi | 10.1063/1.3264692 | |
| dc.neeo.contributor | White|John Kingston|aut| | en |
| dc.neeo.contributor | Dunne|Padraig|aut| | en |
| dc.neeo.contributor | Hayden|Patrick|aut| | en |
| dc.neeo.contributor | O'Sullivan|Gerry|aut| | en |
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