Recent work in UCD has centred on the development of a liquid metal coating process for EUV and soft X-ray collector optics. The work involves using a room temperature liquid metal coated on a solid metal substrate of the ...
Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to ...
Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d_5p transitions compared with that from 4d_4f and 4p_4d transitions in Xe XI and also with that ...