We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within ...
Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to ...
We have demonstrated the effect of viewing angle on the extreme ultraviolet (EUV) emission spectra of gadolinium (Gd) near 6.7 nm. The spectra are shown to have a strong dependence on viewing angle when produced with a ...
An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved ...
We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays in the 2 to 4 ...
We report results from a combined optical interferometric and spectrally resolved imaging study on colliding laser produced aluminium plasmas. A Nomarski interferometer was used to probe the spatio-temporal distribution ...
Measurements of the total ion emission from a pair of colliding laser-produced aluminium plasmas were obtained with the aid of a Faraday cup detector. The energy profile width at half height of the kinetic energy distribution ...
Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions ...
The collision of two laser generated plasma plumes can result, under appropriate conditions, in the formation of ‘stagnation layer’. The processes underlying this phenomenon are complex and time dependent. The majority of ...