The effective disinfection of hospital surfaces is recognised as an important factor in preventing hospital-acquired infections. The purpose of this study was to quantify the disinfection rate of a novel gas plasma system ...
The photoactivity of carbon-incorporated titanium dioxide (TiO2) has been widely reported. This study involves a novel approach to the incorporation of carbon into TiO2 through the use of microwave plasma processing. The ...
Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions ...
We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within ...
Measurements of the total ion emission from a pair of colliding laser-produced aluminium plasmas were obtained with the aid of a Faraday cup detector. The energy profile width at half height of the kinetic energy distribution ...
The collision of two laser generated plasma plumes can result, under appropriate conditions, in the formation of ‘stagnation layer’. The processes underlying this phenomenon are complex and time dependent. The majority of ...
We report results from a combined optical interferometric and spectrally resolved imaging study on colliding laser produced aluminium plasmas. A Nomarski interferometer was used to probe the spatio-temporal distribution ...
We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays in the 2 to 4 ...
For policy intervention to be effective, we need to know where such intervention is likely to have most effect. There is literature emerging on this from a variety of sources. This paper synthesises some of this information ...
Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to ...