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(SPIE, 2010-08-02)Recent work in UCD has centred on the development of a liquid metal coating process for EUV and soft X-ray collector optics. The work involves using a room temperature liquid metal coated on a solid metal substrate of the ...
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(American Institute of Physics, 2010-09-21)Extreme ultra-violet (EUV) emission spectra from highly charged tin, xenon and tungsten ions have been measured in optically thin high-temperature plasmas produced in the Large Helical Device (LHD) at the National Institute ...
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(IOP Publishing, 2004-12)Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d_5p transitions compared with that from 4d_4f and 4p_4d transitions in Xe XI and also with that ...
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(IOP Publishing, 2011)Charge state specific extreme ultraviolet spectra from both tin ions and xenon ions have been recorded at Tokyo Metropolitan University. The Electron Cyclotron Resonance Source spectra were produced from charge exchange ...
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(American Institute of Physics, 2010-12)We have demonstrated rare-earth plasma extreme ultraviolet sources at 6.7 nm to investigate the spectral behavior and the conversion efficiencies to different laser wavelength and the initial target densities. The conversion ...
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(Institute of Physics, 2011-08-24)We have measured extreme ultraviolet (EUV) spectra from tungsten ions around 20 nm region in plasmas produced in the Large Helical Device at the National Institute for Fusion Science. The spectra after injecting a tungsten ...
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(American Institute of Physics, 2011-02-28)We have characterized the emission spectrum and temporal history of a pure potassium plasma in a capillary discharge. Strong broadband emission was observed around 40 nm due to 3s−3p, 3p−3d, and 3d−4f transitions in ions ...
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(American Institute of Physics, 2012)We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within ...
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(Society of Photo-optical Instrumentation Engineers, 2011-08-22)An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved ...
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(SPIE, 2011-10-07)A next-generation laser-produced plasma system based on rare-earth targets generates strong resonant line emissions at 6.5–6.7nm.