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(American Institute of Physics, 2011)The collision of two laser generated plasma plumes can result, under appropriate conditions, in the formation of ‘stagnation layer’. The processes underlying this phenomenon are complex and time dependent. The majority of ...
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(Institute of Physics, 2009-03-07)We report results from a combined optical interferometric and spectrally resolved imaging study on colliding laser produced aluminium plasmas. A Nomarski interferometer was used to probe the spatio-temporal distribution ...
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(Institute of Physics, 2011-09-07)Measurements of the total ion emission from a pair of colliding laser-produced aluminium plasmas were obtained with the aid of a Faraday cup detector. The energy profile width at half height of the kinetic energy distribution ...
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(American Institute of Physics, 2010-01-15)The expansion dynamics of ion and neutral species in laterally colliding laser produced aluminium plasmas have been investigated using time and space resolved optical emission spectroscopy and spectrally and angularly ...
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(Kluwer Academic Publishers-Plenum Publishers, 2002-04)A series of Cu catalysts were studied as a function of support (Al2O3, TiO2 and SiO2) and Cu precursor (ex-SO4 and ex-NO3) for activity in the SCR-NH3 reaction. The catalysts were characterized using NOx TPD and SEM/EDAX ...
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(American Institute of Physics, 2011-12-05)Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions ...
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(American Institute of Physics, 2012)We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within ...
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(American Institute of Physics, 2012)We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays in the 2 to 4 ...
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(American Institute of Physics, 2009-12-04)Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to ...
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(SPIE, 2011-10-07)A next-generation laser-produced plasma system based on rare-earth targets generates strong resonant line emissions at 6.5–6.7nm.