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Browsing by Author "Dunne, Padraig"
Now showing items 1-10 of 10
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O'Gorman, Colm ; Otsuka, Takamitsu ; Yugami, Noboru ; Jiang, Weihua ; Endo, Akira ; Li, Bowen ; Cummins, T. (Thomas) ; Dunne, Padraig ; Sokell, Emma ; O'Sullivan, Gerry ; Higashiguchi, Takeshi (American Institute of Physics, 2012)We have demonstrated the effect of viewing angle on the extreme ultraviolet (EUV) emission spectra of gadolinium (Gd) near 6.7 nm. The spectra are shown to have a strong dependence on viewing angle when produced with a ...
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Higashiguchi, Takeshi ; Otsuka, Takamitsu ; Yugami, Noboru ; Endo, Akira ; Li, Bowen ; Dunne, Padraig ; O'Sullivan, Gerry (American Institute of Physics, 2012)We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays in the 2 to 4 ...
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Li, Bowen ; Dunne, Padraig ; Higashiguchi, Takeshi ; Otsuka, Takamitsu ; Yugami, Noboru ; Jiang, Weihua ; Endo, Akira ; O’Sullivan, Gerry (American Institute of Physics, 2011-12-05)Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions ...
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Cummins, T. (Thomas) ; Otsuka, Takamitsu ; Yugami, Noboru ; Jiang, Weihua ; Endo, Akira ; Li, Bowen ; O'Gorman, Colm ; Dunne, Padraig ; Sokell, Emma ; O'Sullivan, Gerry ; Higashiguchi, Takeshi (American Institute of Physics, 2012)We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within ...
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Li, Bowen ; Endo, Akira ; O'Gorman, Colm ; Otsuka, Takamitsu ; Cummins, T. (Thomas) ; Donnelly, Tony ; Kilbane, Deirdre ; Dunne, Padraig ; O'Sullivan, Gerry ; Jiang, Weihua ; Higashiguchi, Takeshi ; Yugami, Noboru (Society of Photo-optical Instrumentation Engineers, 2011-08-22)An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved ...
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Higashiguchi, Takeshi ; Otsuka, Takamitsu ; Yugami, Noboru ; Jiang, Weihua ; Endo, Akira ; Dunne, Padraig ; Li, Bowen ; O'Sullivan, Gerry (SPIE, 2011-10-07)A next-generation laser-produced plasma system based on rare-earth targets generates strong resonant line emissions at 6.5–6.7nm.
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White, John Kingston ; Dunne, Padraig ; Hayden, Patrick ; O'Sullivan, Gerry (American Institute of Physics, 2009-12-04)Many next generation lithography schemes for the semiconductor industry are based on a 13.5-nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to ...
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Higashiguchi, Takeshi ; Yamaguchi, Mami ; Otsuka, Takamitsu ; Terauchi, Hiromitsu ; Yugami, Noboru ; Yatagai, Toyohiko ; D'Arcy, Rebekah ; Dunne, Padraig ; O'Sullivan, Gerry (American Institute of Physics, 2011-02-28)We have characterized the emission spectrum and temporal history of a pure potassium plasma in a capillary discharge. Strong broadband emission was observed around 40 nm due to 3s−3p, 3p−3d, and 3d−4f transitions in ions ...
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Otsuka, Takamitsu ; White, John ; Kilbane, Deirdre ; Higashiguchi, Takeshi ; Yugami, Noboru ; Yatagai, Toyohiko ; Jiang, Weihua ; Endo, Akira ; Dunne, Padraig ; O’Sullivan, Gerry (American Institute of Physics, 2010-12)We have demonstrated rare-earth plasma extreme ultraviolet sources at 6.7 nm to investigate the spectral behavior and the conversion efficiencies to different laser wavelength and the initial target densities. The conversion ...
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Fahy, Kenneth ; Dunne, Padraig ; McKinney, Luke ; O'Sullivan, Gerry ; Sokell, Emma ; White, John K. ; Aguilar, A. ; Pomeroy, J.M. ; Tan, J.N. ; Blagojevi, B. ; LeBigot, E.-O. ; Gillaspy, J.D. (IOP Publishing, 2004-12)Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d_5p transitions compared with that from 4d_4f and 4p_4d transitions in Xe XI and also with that ...
Now showing items 1-10 of 10
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